AM-CHAMP

Advanced material characterisation and imaging platform - Coming soon (Q4 2026)

Understanding how a given material is composed on the microscale is at the heart of all modern technology developments from renewable energy generation and storage (solar cells, batteries), microelectronics (microprocessors, memory devices and communication electronics), environmental protection (sensing, monitoring, filtering) to medical devices and diagnostics.
The advanced materials characterisation tool, funded by Research Ireland and DCU will providing detailed information on the chemical composition and electronic properties of materials and devices. The system, unique in the country, will combine several measurement principles in one single instrument, allowing critical functional parameters to be identified and optimised for specific application domains. It gives Irish researchers access to a new type of measurement (Hard X-ray Photoelectron spectroscopy, HAXPES) currently only available at synchrotron radiation facilities across the world and offers significantly enhanced measurement capabilities of sub-surface chemical composition.

Available techniques

  • XPS: X-ray photoelectron spectroscopy using a monochromised Al Kalpha source. This technique provides information of a given sample surface stoichimetry (probe depth up to 5nm). The probe size can vary between 10-200 micrometer
  • HAXPES: Hard X-ray photoelectron spectroscopy using a monochromised Cr Kalpha source. This technique provides information of a given sample sub-surface stoichimetry (probe depth up to 25nm). The probe size can vary between 20-200 micrometer
  • UPS: UV photoelectron spectroscopy using a He lamp. This technique provides information of a given samples valence band strcuture as well as workfunction measurement. The probe size will be around 2mm
  • LEIPS: Low energy inverse photoemission. This technique provides information of a given samples conduction band strcuture. The probe size will be around 1mm
  • SEM: Scanning electron and Scanning Auger microscopy. The system has an in-built electron beam to image the samples and select measurement areas for all other techniques
  • XPI/SAM: X-ray photoelectron imaging/Auger microscopy. The system can scan the X-Ray spot over the surface creating stoichimetry specific images with about 10um spatial resolution. Using the SEM column it is also possible to do Auger electron imaging providing stoichimetry images wit less than a micrometer spatial resolution
  • Depth profiling - angle resolved: By changing the sample angle both XPS and HAXPES data can be utilised to model the depth profile of the stoichiometry of a sample non-destructively
  • Depth profiling - sputtering: By probing the stoichiometry by AES or XPS as function of sputter depth more comprehensive depth profiles of the stoichiometry can be measured. The system supports Ar ion and Ar gas cluster sputtering modes.
  • REELS: Reflection electron loss spectroscopy. Analysing the loss of kinetic energy of electrons we can provide information on a specific samples phase and electronic band gap.
  • Full automation: All mesurements can be done in fully automated mode with minimal user interaction. Multiple sample stages can be loaded, the sample size can be up to 8x8cm and all measurements can run unsupervised (i.e. overnight)

Image gallery

The system has been delivered in early June 2026 and is now being commissioned:

Manufacturer

The core system for the AM-CHAMP lab will be a fully equipped PHI Genesis from Physical Electronics/ULVAC. More details on its capabilites can be found at the Manufacturers website

Contact

Dr. Karsten Fleischer We gratefully acknowledge funding by Research Ireland under grant No: 23/RI/11962