Research in an industrial
environment:
Characterisation of Transistor
Gate Oxides
using Tunnel Current Measurements
Greg Hughes
School of Physical Sciences,
Thursday, 1st June, 2000
Room N115, Block 2, 16.00 hrs
All Welcome
The talk will outline my research experiences during the last semester
at the Intel plant in Leixlip. The work focused on the electrical characterisation
of transistor gate dielectrics. The analysis of the results in relation
to the Fowler-Nordheim tunneling theory of conduction through a triangular
barrier was shown to accurately represent data for thick transistor gates.
For thinner gates, quantum mechanical oscillations in the tunnel current
were observed which can be used to characterise the dielectric itself.
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