Dr. Andreas Danilewsky, Kristallographisches Institut, University of Freiburg, Germany.

A wide variety of experimental parameters influences the crystallographic and physical properties of semiconductor crystals and the reproducible production of high quality single crystals as a basic material for electronic devices is a very complex business. Fundamental studies ? growth experiments combined with numerical simulations - help to change "the art of crystal growth" into "the science of crystal growth". For III-V-compounds (GaAs, InP, GaSb) as an example the influence of the material transport in the liquid nutrient as well as the growth kinetics on the homogeneity of the dopant distribution and defect generation will be discussed with special emphasis on the results of growth experiments which were performed under reduced gravity on board of the US space shuttle and various European and Russian satellites.